SSM6J26FE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM6J26FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
SSM6J26FE
High Speed Switching Applications
Unit: mm
• Optimum for high-density mounting in small packages
• Low on-resistance: R_on = 230mΩ (max) (@V_GS = -4 V)
R_on = 330mΩ (max) (@V_GS = -2.5 V)
R_on = 980mΩ (max) (@V_GS = -1.8 V)
Absolute Maximum Ratings (Ta = 25°C)
1.6±0.05
1.2±0.05
1
6
2
5
Characteristics
Drain-Source voltage
Symbol
V_DS
Rating
Unit
-20
V
3
4
Gate-Source voltage
V_GSS
±8
V
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
I_D
-0.5
A
I_DP
-1.5
P_D
500
mW
(Note 1)
T_ch
150
°C
T_stg
−55~150
°C
1,2,5,6 :Drain
3 :Gate
4 :Source
ES6
JEDEC
―
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
―
2-2N1A
reliability significantly even if the operating conditions (i.e.
Weight: 3.0 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Marking
654
PI
Equivalent Circuit (top view)
654
123
123
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01