SSM6J215FE Datasheet, PDF(1/9 Page) Toshiba Semiconductor – MOSFETs Silicon P-Channel MOS (U-MOSVI)

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SSM6J215FE Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon P-Channel MOS (U-MOSVI)

MOSFETs Silicon P-Channel MOS (U-MOSî±)

SSM6J215FE

1. Applications

â¢ Power Management Switches

2. Features

(1) 1.5-V gate drive voltage.

(2) Low drain-source on-resistance

: RDS(ON) = 154 mâ¦ (max) (@VGS = -1.5 V)

RDS(ON) = 104 mâ¦ (max) (@VGS = -1.8 V)

RDS(ON) = 79 mâ¦ (max) (@VGS = -2.5 V)

RDS(ON) = 59 mâ¦ (max) (@VGS = -4.5 V)

3. Packaging and Pin Configuration

ES6

SSM6J215FE

1,2,5,6: Drain

3: Gate

4: Source

Start of commercial production

2011-07

2014-04-04

Rev.2.0

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