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SSM6J207FE_14 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type | |||
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SSM6J207FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J207FE
â High-Speed Switching Applications
⢠4 V drive
⢠Low ON-resistance:
Ron = 491 m⦠(max) (@VGS = â4 V)
Ron = 251 m⦠(max) (@VGS = â10 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25ËC)
Characteristic
Symbol
Rating
Unit
Drainâsource voltage
VDS
-30
V
Gateâsource voltage
VGSS
± 20
V
Drain current
DC
ID
Pulse
IDP
-1.4
A
-2.8
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature
Storage temperature
Tch
150
°C
Tstg
â55 to 150
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (âHandling Precautionsâ/âDerating
Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Mounted on an FR4 board
(25.4 mm à 25.4 mm à 1.6 t, Cu Pad: 645 mm2)
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
ES6
JEDEC
â
JEITA
â
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drainâsource breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drainâsource ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drainâsource forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V (BR) DSS
V (BR) DSX
ID = â1 mA, VGS = 0
ID = â1 mA, VGS = + 20 V
â30
â¯
â¯
V
â15
â¯
â¯
IDSS
VDS = â30 V, VGS = 0
â¯
â¯
â1
μA
IGSS
Vth
VGS = ±16 V, VDS = 0
VDS = â5 V, ID = â1 mA
â¯
â¯
±1
μA
â1.2
â¯
â2.6
V
âYfsâ
VDS = â5 V, ID =â 0.65 A
(Note 2) 0.8
1.5
â¯
S
ID = â0.65 A, VGS = â10 V (Note 2)
â¯
191 251
RDS (ON)
mΩ
ID = â0.4 A, VGS = â4 V
(Note 2)
â¯
371 491
Ciss
Coss
Crss
ton
toff
VDS = â15 V, VGS = 0, f = 1 MHz
VDS = â15 V, VGS = 0, f = 1 MHz
VDS = â15 V, VGS = 0, f = 1 MHz
VDD = â15 V, ID = â0.65 A,
VGS = 0 to â4 V, RG = 10 â¦
â¯
137
â¯
pF
â¯
39
â¯
pF
â¯
20
â¯
pF
â¯
15
â¯
ns
â¯
14
â¯
VDSF
ID = 1.4 A, VGS = 0 V
(Note 2) â¯
0.85 1.2
V
Start of commercial production
2005-12
1
2014-03-01
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