|
SSM6J206FE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Management Switch Applications | |||
|
SSM6J206FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J206FE
â Power Management Switch Applications
â High-Speed Switching Applications
Unit: mm
⢠1.8 V drive
⢠Low ON-resistance: Ron = 320 m⦠(max) (@VGS = -1.8 V)
Ron = 186 m⦠(max) (@VGS = -2.5 V)
Ron = 130 m⦠(max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25ËC)
Characteristic
Symbol
Rating
Unit
Drainâsource voltage
VDS
-20
V
Gateâsource voltage
VGSS
±8
V
Drain current
DC
ID
Pulse
IDP
-2
A
-4
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature
Tch
150
°C
1, 2, 5, 6 : Drain
Storage temperature
Tstg
â55 to 150
°C
3 : Gate
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
4
ES6
JEDEC
: Source
â
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
â
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm à 25.4 mm à 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drainâsource breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drainâsource ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drainâsource forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V (BR) DSS ID = -1 mA, VGS = 0
V (BR) DSX ID = -1 mA, VGS = +8 V
IDSS
VDS = -20 V, VGS = 0
-20
â¯
â¯
V
-12
â¯
â¯
â¯
â¯
-10
μA
IGSS VGS = ±8 V, VDS = 0
â¯
â¯
±1
μA
Vth
VDS = -3 V, ID = -1 mA
-0.3
â¯
-1.0
V
âYfsâ VDS = -3 V, ID = -1 A
(Note 2) 2.4
4
â¯
S
RDS (ON)
ID = -1.0 A, VGS = -4 V
ID = -0.5 A, VGS = -2.5 V
ID = -0.2 A, VGS = -1.8 V
(Note 2) â¯
(Note 2) â¯
(Note 2) â¯
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
â¯
Coss VDS = -10 V, VGS = 0, f = 1 MHz
â¯
Crss
VDS = -10 V, VGS = 0, f = 1 MHz
â¯
91
130
130 186 mΩ
180 320
335
â¯
pF
70
â¯
pF
56
â¯
pF
ton
toff
VDSF
VDD = -10 V, ID = -1 A,
VGS = 0 to -2.5 V, RG = 4.7 Ω
ID = 2 A, VGS = 0
(Note 2)
â¯
20
â¯
ns
â¯
20
â¯
â¯
0.85 1.2
V
1
2007-11-01
|
▷ |