SSM6J08FU_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Power Management Switch

SSM6J08FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
SSM6J08FU
Power Management Switch
DC-DC Converter
Unit: mm
• Small Package
• Low on Resistance : R_on = 0.18 Ω (max) (@V_GS = −4 V)
: R_on = 0.26 Ω (max) (@V_GS = −2.5 V)
• Low Gate Threshold Voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
−20
V
Gate-Source voltage
V_GSS
±12
V
Drain current
DC
I_D
−1.3
A
Pulse
I_DP (Note 2)
−2.6
Drain power dissipation
P_D (Note 1)
300
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2J1D
Weight: 6.8 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm² × 6) Fig: 1.
Note 2: The pulse width limited by max channel temperature.
Marking
Equivalent Circuit
Fig 1: 25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 0.32 mm² × 6
654
KDD
654
0.4 mm
123
123
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01