SSM6J07FU_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Management Switch

TOSHIBA Transistor Silicon P Channel MOS Type
SSM6J07FU
Power Management Switch
High Speed Switching Applications
SSM6J07FU
Unit: mm
• Small package
• Low on resistance
: R_on = 450 mΩ (max) (V_GS = −10 V)
: R_on = 800 mΩ (max) (V_GS = −4 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DS
−30
V
Gate-source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
−0.8
A
−1.6
Drain power dissipation
P_D (Note 1)
300
mW
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
2-2J1D
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 6.8 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm² × 6)
Marking
Equivalent Circuit
(top view)
Figure 1: 25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 0.32 mm² × 6
654
KDF
6 54
0.4 mm
123
123
1
2007-11-01