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SSM6G18NU Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
SSM6G18NU
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
SSM6G18NU
Power Management Switch Applications
• Combined a P-channel MOSFET and a Schottky barrier diode in one
package.
• Low RDS (ON) and Low VF
RDS(ON) = 261 mΩ (max) (@VGS = -1.5V)
RDS(ON) = 185 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 143 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 112 mΩ (max) (@VGS = -4.5 V)
2.0±0.1
Unit: mm
B
A
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Power dissipation
Channel temperature
Symbol
Rating
Unit
VDSS
−20
V
VGSS
±8
V
ID (Note 1)
−2.0
A
IDP (Note 1)
−4.0
PD(Note 2)
1
W
t ＜10s
2
Tch
150
°C
Schottky Barrier Diode(Ta = 25°C)
Characteristics
Reverse voltage
Average forward current
Peak one cycle surge forward
current(10ms)
Junction temperature
Symbol
VR
IO
IFSM
Tj
Rating
Unit
30
V
1.0
A
5.0
A
150
°C
*BOTTOM VIEW
1
0.65 0.65
0.95
2
3
0.13
0～0.05
6
0.3±0.075
0.05 M A B
5
4
0.65±0.075 0.65±0.075
0.05 M A B
1. Anode
2. NC
3. Drain
4. Source
5. Gate
6. Cathode
UDFN6
JEDEC
―
JEITA
―
TOSHIBA
2-2Y1A
Weight: 8.5 mg (typ.)
MOSFET and Diode (Ta = 25°C)
Characteristics
Storage temperature range
Symbol
Rating
Unit
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645mm2)
Start of commercial production
2010-11
1
2014-03-01
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