SSM6E01TU_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Load Switch Applications

SSM6E01TU
TOSHIBA Multi-Chip Device
Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer)
SSM6E01TU
Load Switch Applications
• P-channel MOSFET and N-channel MOSFET incorporated into one
package.
• Low power dissipation due to P-channel MOSFET that features low
R_{DS (ON)} and low-voltage operation
Unit: mm
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
−12
V
Gate-Source voltage
V_GSS
±12
V
Drain current
DC
I_D
−1.0
A
Pulse
I_DP (Note 2)
−2.0
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
20
V
Gate-Source voltage
V_GSS
10
V
Drain current
DC
I_D
0.05
A
Pulse
I_DP (Note 2)
0.2
Absolute Maximum Ratings (Q1, Q2 common)
(Ta = 25°C)
Characteristics
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
P_D (Note 1)
0.5
W
T_ch
150
°C
T_stg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: 7.0 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm²)
Note 2: Pulse width limited by maximum channel temperature.
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
KTA
Q1
Q2
1
2
3
1
2
3
1
2007-11-01