SSM6E01TU Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Load Switch Applications

SSM6E01TU
TOSHIBA Multi-Chip Device
Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer)
SSM6E01TU
Load Switch Applications
Unit: mm
· P-channel MOSFET and N-channel MOSFET incorporated into one
package.
· Low power dissipation due to P-channel MOSFET that features low
RDS (ON) and low-voltage operation
Q1 Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
-12
V
Gate-Source voltage
V_GSS
±12
V
Drain current
DC
I_D
-1.0
A
Pulse
I_DP (Note 2)
-2.0
Q2 Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
20
V
Gate-Source voltage
V_GSS
10
V
Drain current
DC
I_D
0.05
A
Pulse
I_DP (Note 2)
0.2
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: 7.0 mg (typ.)
Maximum Ratings (Q1, Q2 common) (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain power dissipation
Channel temperature
Storage temperature range
P_D (Note 1)
0.5
W
T_ch
150
°C
T_stg
-55~150
°C
Note 1: Mounted on an FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm²)
Note 2: Pulse width limited by maximum channel temperature.
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
KTA
Q1
Q2
1
2
3
1
2
3
1
2003-01-16