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SSM5P16FE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications | |||
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SSM5P16FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM5P16FE
High Speed Switching Applications
Analog Switch Applications
⢠Small package
⢠Low on-resistance
: Ron = 8 Ω (max) (@VGS = â4 V)
: Ron = 12 Ω (max) (@VGS = â2.5 V)
: Ron = 45 Ω (max) (@VGS = â1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
â20
V
Gate-Source voltage
VGSS
±10
V
Drain current
DC
Pulse
ID
â100
mA
IDP
â200
Drain power dissipation (Ta = 25°C)
PD (Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
â55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1:
Total
(25.4
rating, mounted on FR4 board
mm à 25.4 mm à 1.6 t, Cu Pad:
0.135
mm2
Ã
5)
Unit: mm
JEDEC
JEITA
TOSHIBA
â
â
2-2P1B
0.3 mm
Marking
5
4
Equivalent Circuit (top view)
5
4
DT
Q1
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
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