SSM5P15FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM5P15FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM5P15FU
High Speed Switching Applications
Analog Switch Applications
• Small package
• Low ON resistance : R_on = 12 Ω (max) (@V_GS = −4 V)
: R_on = 32 Ω (max) (@V_GS = −2.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
−30
V
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
Pulse
I_D
−100
mA
I_DP
−200
Drain power dissipation (Ta = 25°C)
P_{D (Note 1)}
200
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
1: Gate1
2: Source
3: Gate2
4: Drain2
5: Drain1
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2L1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.006g(typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating.
Marking
5
Equivalent Circuit (top view)
4
5
4
DQ
Q1
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01