SSM5N15FE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications Analog Switch Applications

SSM5N15FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N15FE
High Speed Switching Applications
Analog Switch Applications
Unit: mm
· Small package
· Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V)
: Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
30
V
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
Pulse
I_D
100
mA
I_DP
200
Drain power dissipation (Ta = 25°C)
P_D (Note)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
-55~150
°C
Note: Total rating, mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.135 mm² ´ 5)
0.3 mm
JEDEC
―
JEITA
―
TOSHIBA
2-2P1B
Weight: 0.003 g (typ.)
Marking
Equivalent Circuit (top view)
5
4
5
4
DP
Q1
Q2
1
2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2001-10-30