SSM5H90ATU Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar

Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar
SSM5H90ATU
1. Applications
• High-Speed Switching
2. Features
(1) Combined an N-channel MOSFET and a diode in one package.
2.1. MOSFET Features
(1) Low drain-source on-resistance
: R_DS(ON) = 65 mΩ (max) (@V_GS = 4.0 V)
R_DS(ON) = 89 mΩ (max) (@V_GS = 2.5 V)
(2) 2.5-V gate drive voltage.
2.2. Diode Features
(1) Low reverse current: I_R = 0.1 µA (typ.) (@V_R = 30 V)
3. Packaging and Internal Circuit
SSM5H90ATU
1: Gate
2: Source
3: Anode
4: Cathode
5: Drain
UFV
4. Absolute Maximum Ratings (Note)
4.1. Absolute Maximum Ratings of the MOSFET
(Unless otherwise specified, T_a = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
(Note 1)
Drain current (pulsed)
(Note 1)
Channel temperature
Note 1: Ensure that the channel temperature does not exceed 150 .
V_DSS
V_GSS
I_D
I_DP
T_ch
20
V
±10
2.4
A
4.8
150

Start of commercial production
2012-03
1
2014-04-04
Rev.3.0