SSM5H14F Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode

SSM5H14F
Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5H14F
○ Fuse cut applications of the battery pack
• 1.8-V drive
• An N-ch MOSFET and a Schottky Barrier Diode in one package.
• Low R_{DS (ON)} and Low V_F
Unit: mm
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V_DSS
30
V
Gate-source voltage
V_GSS
±12
V
Drain current
DC
I_D
Pulse
I_DP
3.0
A
6.0
Drain power dissipation
P_D (Note 1)
0.75
W
Channel temperature
T_ch
150
°C
Schottky Diode (Ta = 25°C)
Characteristics
Symbol
Maximum (peak) reverse Voltage
V_RM
Reverse voltage
Average forward current
Maximum (peak) forward current
Surge current (10ms)
Junction temperature
V_R
I_O
I_FM
I_FSM
T_j
MOSFET and Diode (Ta = 25°C)
Rating
Unit
45
V
40
V
100
mA
300
mA
1
A
125
°C
SMV
1. Gate
2. Source
3. Anode
4. Cathode
5. Drain
JEDEC
⎯
JEITA
SC-74A
TOSHIBA
2-3L1F
Weight : 14 mg (typ.)
Characteristics
Storage temperature range
Operating temperature range
Symbol
Rating
Unit
T_stg
−55 to 125
°C
T_opr
−40 to 100
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm²)
Marking
5
4
Equivalent Circuit (top view)
5
4
KEZ
123
123
1
2009-05-15