SSM5H12TU Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – DC-DC Converter Applications

SSM5H12TU
Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode
SSM5H12TU
DC-DC Converter Applications
• 1.8-V drive
• Combined an N-ch MOSFET and a Schottky barrier diode in one
package.
• Low R_{DS (ON)} and Low V_F
Unit: mm
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V_DSS
30
V
Gate-source voltage
V_GSS
± 12
V
Drain current
DC
I_D
Pulse
I_DP
1.9
A
3.8
Power dissipation
P_D (Note 1)
0.5
W
t = 10s
0.8
Channel temperature
T_ch
150
°C
Schottky Barrier Diode (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
Junction temperature
V_RRM
I_F(AV)
I_FSM
T_j
30
V
0.7
A
2 (50Hz)
A
125
°C
MOSFET and Diode (Ta = 25°C)
Characteristics
Storage temperature range
Symbol
Rating
Unit
T_stg
−55 to 125
°C
UFV
JEDEC
―
JEITA
―
TOSHIBA
2-2R1A
Weight: 7 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm²)
Marking
5
4
Equivalent Circuit (top view)
5
4
KEW
123
123
1
2008-09-27