SSM5H06FE Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Combined Nch MOSFET and Schottky Diode in one Package.

SSM5H06FE
Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
SSM5H06FE
DC-DC Converter
• Combined Nch MOSFET and Schottky Diode in one Package.
• Small package
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Unit: mm
1.6±0.05
1.2±0.05
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
DC
Pulse
Symbol
Rating
Unit
V_DS
20
V
V_GSS
±10
V
I_D
100
mA
I_DP (Note 2)
200
P_D (Note 1)
150
mW
T_ch
150
°C
1
5
2
3
4
Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY
DIODE
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
V_RM
V_R
I_O
I_FSM
T_j
15
V
12
V
100
mA
1 (50 Hz)
A
125
°C
Absolute Maximum Ratings (Ta = 25°C) MOSFET,
DIODE COMMON
1.Gate
2.Source
3.Anode
4.Cathode
5.Drain
ESV
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2P1C
Weight: 3 mg (typ.)
Characteristics
Storage temperature
Operating temperature
Symbol
Rating
Unit
T_stg
−55~125
°C
T_opr
−40~100
°C
(Note 3)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm² × 5)
0.3 mm
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
1
2007-11-01