SSM5G06FE Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode

SSM5G06FE
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
SSM5G06FE
DC-DC Converter Applications
• Combined a P-channel MOSFET and a Schottky barrier diode in one
package.
• Optimum for high-density mounting in small packages
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DSS
−20
V
Gate-Source voltage
V_GSS
±10
V
Drain current
DC
I_D
−100
mA
Pulse I_DP (Note 2)
−200
Power dissipation
P_D (Note 1)
150
mW
Channel temperature
T_ch
150
°C
Absolute Maximum Ratings (Ta = 25°C) SBD
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(10ms)
Junction temperature
V_RM
V_R
I_O
I_FSM
T_j
15
V
12
V
100
mA
1 (50 Hz)
A
125
°C
Unit: mm
1.6±0.05
1.2±0.05
1
5
2
3
4
1：Gate 4：Cathode
2：Source 5：Drain
3：Anode
ESV
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2P1C
Weight: 3 mg (Typ.)
Absolute Maximum Ratings (Ta = 25°C) MOSFET, SBD COMMON
Characteristics
Symbol
Rating
Unit
Storage temperature range
Operating temperature range
T_stg
−55 to 125
°C
T_opr (Note3) −40 to 100
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Total rating. Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm² × 5)
0.3 mm
Start of commercial production
2002-08
1
2014-03-01