SSM5G02TU_14 Datasheet, PDF (1/10 Pages) Toshiba Semiconductor – Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode

SSM5G02TU
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
SSM5G02TU
DC-DC Converter
• Combined Pch MOSFET and Schottky Diode into one Package.
• Low R_{DS (ON)} and Low V_F
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Symbol
Rating
Unit
V_DS
−12
V
V_GSS
±12
V
I_D
−1.0
A
I_DP (Note 2)
−2.0
P_D (Note 1)
0.5
W
t = 10s
0.8
T_ch
150
°C
Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY
DIODE
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
V_RM
V_R
I_O
I_FSM
T_j
15
V
12
V
0.5
A
2 (50 Hz)
A
125
°C
UFV
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2R1A
Weight: 7 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON
Characteristics
Symbol
Rating
Unit
Storage temperature
Operating temperature
T_stg
−55 to 125
°C
T_opr
(Note 3)
−40 to 85
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm²)
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
Start of commercial production
2002-05
1
2014-03-01