SSM5G01TU Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – DC-DC Converter for DSCs and Camcorders

Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode
SSM5G01TU
DC-DC Converter for DSCs and Camcorders
· Co-packaged Pch MOSFET and Schottky Diode.
· Low RDS (ON) and Low VF
SSM5G01TU
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Channel temperature
Channel temperature
Symbol
Rating
Unit
V_DS
-30
V
V_GSS
±20
V
I_D
-1.0
A
I_DP (Note 2)
-2.0
P_D (Note 1)
0.5
W
t = 10s
0.8
T_ch
150
°C
Maximum Ratings (Ta = 25°C) SCHOTTKY DIODE
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
V_RM
V_R
I_O
I_FSM
T_j
25
V
20
V
0.5
A
2 (50 Hz)
A
125
°C
UFV
JEDEC
―
JEITA
―
TOSHIBA
2-2R1A
Weight: 7 mg (typ.)
Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON
Characteristics
Symbol
Rating
Unit
Storage temperature
Operating temperature
T_stg
-55~125
°C
T_opr
(Note 3)
-40~100
°C
Note 1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm²)
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
1
2001-12-05