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SSM3K7002F_05 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications | |||
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SSM3K7002F
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM3K7002F
High-Speed Switching Applications
Analog Switch Applications
⢠Small package
⢠Low ON-resistance : Ron = 3.3 ⦠(max) (@VGS = 4.5 V)
: Ron = 3.2 ⦠(max) (@VGS = 5 V)
: Ron = 3.0 ⦠(max) (@VGS = 10 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Symbol
VDS
VGSS
ID
IDP
PD
Tch
Tstg
Rating
Unit
60
V
± 20
V
200
mA
800
200
mW
150
°C
â55 to 150
°C
Unit: mm
+0. 5
2.5-0.3
+0.25
1. 5-0. 15
1
2
3
S-MINI
1.Gate
2.Source
3.Drain
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on delay time
Turn-off delay time
Symbol
Test Condition
IGSS
V (BR) DSS
IDSS
Vth
âªYfsâª
RDS (ON)
Ciss
Crss
Coss
td(on)
td(off)
VGS = ± 20 V, VDS = 0
ID = 0.1 mA, VGS = 0
VDS = 60 V, VGS = 0
VDS = 10 V, ID = 0.25 mA
VDS = 10 V, ID = 200 mA
ID = 500 mA, VGS = 10 V
ID = 100 mA, VGS = 5 V
ID = 100 mA, VGS = 4.5 V
VDS = 25 V, VGS = 0, f = 1 MHz
VDD = 30 V , ID = 200 mA ,
VGS = 0 to 10 V
Min Typ Max Unit
â¯
⯠± 10 µA
60
â¯
â¯
V
â¯
â¯
1
µA
1.0
â¯
2.5
V
170 â¯
â¯
mS
â¯
2.0
3.0
â¯
2.1 3.2
â¦
â¯
2.2
3.3
â¯
17
â¯
pF
â¯
1.4
â¯
pF
â¯
5.8
â¯
pF
â¯
2.4
4.0
ns
â¯
26
40
1
2005-11-03
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