SSM3K7002FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM3K7002FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K7002FU
High Speed Switching Applications
Analog Switch Applications
• Small package
• Low ON resistance : R_on = 3.3 Ω (max) (@V_GS = 4.5 V)
: R_on = 3.2 Ω (max) (@V_GS = 5 V)
: R_on = 3.0 Ω (max) (@V_GS = 10 V)
Unit: mm
2.1± 0.1
1.25 ± 0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
60
V
Gate-Source voltage
V_GSS
± 20
V
Drain current
DC
Pulse
I_D
200
mA
I_DP
800
Drain power dissipation (Ta = 25°C)
P_D (Note 1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6mm² × 3)
1
2
3
USM
JEDEC
JEITA
TOSHIBA
1. GATE
2. SOURCE
3. DRAIN
⎯
SC-70
2-2E1E
0.6 mm
1.0 mm
Marking
3
NC
Equivalent Circuit (top view)
3
1
2
Handling Precaution
1
2
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01