 English |
|
|
|
|
|
|
|
| SSM3K56MFV Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS | |||
| |||
|
MOSFETs Silicon N-Channel MOS
SSM3K56MFV
1. Applications
⢠High-Speed Switching
2. Features
(1) 1.5-V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 235 m⦠(max) (@VGS = 4.5 V)
RDS(ON) = 300 m⦠(max) (@VGS = 2.5 V)
RDS(ON) = 480 m⦠(max) (@VGS = 1.8 V)
RDS(ON) = 840 m⦠(max) (@VGS = 1.5 V)
3. Packaging and Pin Configuration
VESM
SSM3K56MFV
1. Gate
2. Source
3. Drain
Start of commercial production
2013-02
1
2014-04-04
Rev.2.0
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese