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| SSM3K56FS Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – High-Speed Switching | |||
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MOSFETs Silicon N-Channel MOS
SSM3K56FS
1. Applications
⢠High-Speed Switching
2. Features
(1) 1.5-V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 235 m⦠(max) (@VGS = 4.5 V)
RDS(ON) = 300 m⦠(max) (@VGS = 2.5 V)
RDS(ON) = 480 m⦠(max) (@VGS = 1.8 V)
RDS(ON) = 840 m⦠(max) (@VGS = 1.5 V)
3. Packaging and Pin Configuration
SSM
SSM3K56FS
1: Gate
2: Source
3: Drain
1
2012-07-19
Rev.1.0
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