SSM3K48FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Load Switching Applications

SSM3K48FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM3K48FU
Load Switching Applications
• 2.5-V drive
• Low ON-resistance: R_DS(ON) = 3.2 Ω (max) (@V_GS = 4.0 V)
R_DS(ON) = 5.4 Ω (max) (@V_GS = 2.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Power dissipation
Channel temperature
Storage temperature range
V_DSS
30
V
V_GSS
±20
V
I_D
100
mA
I_DP
400
P_D (Note 1)
150
mW
T_ch
150
°C
T_stg
−55 to 150
°C
USM
JEDEC
1. Gate
2. Source
3. Drain
―
Note: Using continuously under heavy loads (e.g. the application of
JEITA
SC-70
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2E1E
reliability significantly even if the operating conditions (i.e.
Weight: 6.0 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.6mm² × 3)
0.6 mm
1.0 mm
Marking
3
DZ
1
2
Equivalent Circuit (top view)
3
1
2
1
2010-12-13