SSM3K37MFV Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon N-Channel MOS Type

SSM3K37MFV
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K37MFV
High Speed Switching Applications
Analog Switch Applications
• 1.5-V drive
• Low ON-resistance
R_DS(ON) = 5.60Ω (max) (@V_GS = 1.5 V)
R_DS(ON) = 4.05Ω (max) (@V_GS = 1.8 V)
R_DS(ON) = 3.02Ω (max) (@V_GS = 2.5 V)
R_DS(ON) = 2.20Ω (max) (@V_GS = 4.5 V)
nit: mm
1.2±0.05
0.8±0.05
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
V_DSS
V_GSS
I_D
I_DP
20
V
±10
V
250
mA
500
VESM
1.Gate
2.Source
3.Drain
Drain power dissipation (Ta = 25°C)
P_D (Note 1)
150
mW
Channel temperature
T_ch
150
°C
JEDEC
-
Storage temperature
T_stg
−55 to 150
°C
JEITA
-
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-1L1B
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.5mg (typ.)
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1:Mounted on a FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
0.5mm
0.45mm
0.45mm
0.4mm
Marking
3
Equivalent Circuit
3
SU
1
2
1
2
1
2009-11-13