SSM3K35MFV Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications Analog Switch Applications

SSM3K35MFV
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K35MFV
○ High-Speed Switching Applications
○ Analog Switch Applications
• 1.2 V drive
• Low ON-resistance : R_on = 20 Ω (max) (@V_GS = 1.2 V)
: R_on = 8 Ω (max) (@V_GS = 1.5 V)
: R_on = 4 Ω (max) (@V_GS = 2.5 V)
: R_on = 3 Ω (max) (@V_GS = 4.0 V)
Unit: mm
1.2±0.05
0.8±0.05
1
2
3
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V_DSS
20
V
Gate–source voltage
V_GSS
±10
V
Drain current
DC
I_D
Pulse
I_DP
180
mA
360
Drain power dissipation
P_D (Note 1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55~150
°C
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.585 mm²)
ＶＥＳＭ
1.Gate
2.Source
3.Drain
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-1L1B
Weight: 1.5 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain–source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min
I_GSS
V_GS = ±10 V, V_DS = 0 V
⎯
V _{(BR) DSS} I_D = 0.1 mA, V_GS = 0 V
20
I_DSS
V_DS = 20 V, V_GS = 0 V
⎯
V_th
V_DS = 3 V, I_D = 1 mA
0.4
⏐Y_fs⏐
V_DS = 3 V, I_D = 50 mA
(Note 2) 115
I_D = 50 mA, V_GS = 4 V
(Note 2) ⎯
I_D = 50 mA, V_GS = 2.5 V
(Note 2)
⎯
R_{DS (ON)}
I_D = 5 mA, V_GS = 1.5 V
(Note 2) ⎯
I_D = 5 mA, V_GS = 1.2 V
(Note 2) ⎯
C_iss
⎯
C_rss
V_DS = 3 V, V_GS = 0 V, f = 1 MHz
⎯
C_oss
⎯
t_on
V_DD = 3 V, I_D = 50 mA,
⎯
t_off
V_GS = 0 to 2.5 V
⎯
V_DSF
I_D = - 180 mA, V_GS = 0 V
(Note 2) ⎯
Typ.
⎯
⎯
⎯
⎯
⎯
1.5
2
3
5
9.5
4.1
9.5
115
300
-0.9
Max
±10
⎯
1
1.0
⎯
3
4
8
20
⎯
⎯
⎯
⎯
⎯
-1.2
Unit
μA
V
μA
V
mS
Ω
pF
ns
V
1
2008-05-27