SSM3K336R Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Power Management Switches DC-DC Converters

MOSFETs Silicon N-Channel MOS
SSM3K336R
1. Applications
• Power Management Switches
• DC-DC Converters
2. Features
(1) 4.5 V gate drive voltage.
(2) Low drain-source on-resistance
: R_DS(ON) = 95 mΩ (max) (@V_GS = 10 V)
R_DS(ON) = 140 mΩ (max) (@V_GS = 4.5 V)
3. Packaging and Pin Configuration
SSM3K336R
1. Gate
2. Source
3. Drain
SOT-23F
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
30
V
Gate-source voltage
V_GSS
±20
Drain current (DC)
(Note 1)
I_D
3
A
Drain current (pulsed)
(Note 1,2)
I_DP
8
Power dissipation
(Note 3)
P_D
1
W
Power dissipation
(t ≤ 10 s)
(Note 3)
P_D
2
W
Channel temperature
T_ch
150

Storage temperature
T_stg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1%
Note 3: Device mounted on a FR4 board.(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
1
2012-11-14
Rev.1.0