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SSM3K335R_14 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS (U-MOS -H)
MOSFETs Silicon N-Channel MOS (U-MOS-H)
SSM3K335R
1. Applications
• Power Management Switches
• DC-DC Converters
2. Features
(1) 4.5-V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 38 mΩ (max) (@VGS = 10 V)
RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V)
3. Packaging and Pin Configuration
SSM3K335R
SOT-23F
1.Gate
2.Source
3.Drain
Start of commercial production
2012-02
1
2014-03-12
Rev.4.0