SSM3K333R Datasheet, PDF (1/5 Pages) Unisonic Technologies – 6A, 30V N-CHANNEL POWER MOSFET

SSM3K333R
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS VII-H)
SSM3K333R
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 4.5V drive
• Low ON-resistance: R_DS(ON) = 42 mΩ (max) (@V_GS = 4.5 V)
: R_DS(ON) = 28 mΩ (max) (@V_GS = 10 V)
0.05　M A
0.42^+-00..0058
3
Unit: mm
+0.08
0.17 _-0.07
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
V_DSS
30
V
V_GSS
±20
V
I_D (Note1)
6
A
I_DP (Note1)
12
P_D (Note 2)
1
W
t = 10s
2
T_ch
150
°C
T_stg
−55 to 150
°C
1
2
0.95 0.95
2.9±0.2
A
SOT-23F
JEDEC
1. Gate
2. Source
3. Drain
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-3Z1A
reliability significantly even if the operating conditions (i.e.
Weight: 11 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking
3
KFK
1
2
Equivalent Circuit (top view)
3
1
2
1
2010-11-17