SSM3K329R Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon N-Channel MOS Type

SSM3K329R
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K329R
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.8-V drive
• Low ON-resistance: R_DS(ON) = 289 mΩ (max) (@V_GS = 1.8 V)
: R_DS(ON) = 170 mΩ (max) (@V_GS = 2.5 V)
: R_DS(ON) = 126 mΩ (max) (@V_GS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
0.05　M A
0.42^+-00..0058
3
Unit: mm
+0.08
0.17 _-0.07
1
2
0.95 0.95
2.9±0.2
A
Drain-source voltage
V_DSS
30
V
Gate-source voltage
Drain current
DC
Pulse
Power dissipation
Channel temperature
Storage temperature range
V_GSS
±12
V
I_D
3.5
A
I_DP
7.0
P_D (Note 1)
1
W
t = 10s
2
T_ch
150
°C
T_stg
−55 to 150
°C
SOT-23F
JEDEC
JEITA
1. Gate
2. Source
3. Drain
―
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-3Z1A
Weight: 11 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
1
2010-06-10