SSM3K318T Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)

SSM3K318T
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
SSM3K318T
○ Load Switching Applications
○ High-Speed Switching Applications
• 4.5 V drive
• Low ON-resistance : R_DS(ON) = 145 mΩ (max) (@V_GS = 4.5 V)
: R_DS(ON) = 107 mΩ (max) (@V_GS = 10 V)
+0.2
2.8-0.3
+0.2
1.6-0.1
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
V_DSS
60
V
V_GSS
±20
V
I_D
2.5
A
I_DP
5.0
P_D (Note 1)
700
mW
T_ch
150
°C
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu
Pad: 645 mm²)
１
２
３
TSM
1: Gate
2: Source
3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Symbol
Test Conditions
Min Typ. Max Unit
V _{(BR) DSS} I_D = 10mA, V_GS = 0 V
V _{(BR) DSX} I_D = 10mA, V_GS = -20 V
60
⎯
⎯
V
35
⎯
⎯
I_DSS
V_DS = 60 V, V_GS = 0 V
⎯
⎯
1
μA
I_GSS
V_GS = ±16 V, V_DS = 0 V
⎯
⎯
±1
μA
V_th
V_DS = 5 V, I_D = 1 mA
1.8
⎯
2.8
V
⏐Y_fs⏐
V_DS = 5 V, I_D = 2.0 A
(Note 2) 3.7 7.4
⎯
S
R_{DS (ON)}
I_D = 2.0 A, V_GS = 10 V
I_D = 1.0 A, V_GS = 4.5 V
(Note 2) ⎯ 83.5 107
mΩ
(Note 2) ⎯ 101 145
C_iss
⎯ 235 ⎯
C_oss
V_DS = 30 V, V_GS = 0 V, f = 1 MHz
⎯ 30.5 ⎯
pF
C_rss
⎯ 23.0 ⎯
Q_g
V_DD = 30 V, I_DS= 2.5 A
Q_gs
V_GS = 10 V
Q_gd
⎯
7.0
⎯
⎯
4.8
⎯
nC
⎯
2.2
⎯
t_on
V_DD = 30 V, I_D = 1.0 A,
t_off
V_GS = 0 to 4.5 V, R_G = 10 Ω
⎯ 14.0 ⎯
ns
⎯
9.5
⎯
V_DSF
I_D = -2.5 A, V_GS = 0 V
(Note 2) ⎯ -0.83 -1.2
V
Note2: Pulse test
1
2009-04-09