SSM3K316T Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Fiwld Effect Transistor Silicon N Channel MOS Type

SSM3K316T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K316T
Power Management Switch Applications
High-Speed Switching Applications
• 1.8-V drive
• Low ON-resistance: R_on = 131 mΩ (max) (@V_GS = 1.8 V)
R_on = 87 mΩ (max) (@V_GS = 2.5 V)
R_on = 65 mΩ (max) (@V_GS = 4.5 V)
R_on = 53 mΩ (max) (@V_GS = 10 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
V_DSS
V_GSS
30
V
± 12
V
Drain current
DC
I_D (Note 1)
4.0
A
Pulse
I_DP (Note 1)
8.0
Drain power dissipation
P_D (Note 2)
700
mW
t = 10s
1250
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEDEC
―
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEITA
―
Please design the appropriate reliability upon reviewing the
TOSHIBA
2-3S1A
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
Weight: 10 mg (typ.)
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The Junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note3: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_GSS
I_D = 1 mA, V_GS = 0 V
I_D = 1 mA, V_GS = –12 V
V_DS = 30 V, V_GS = 0 V
V_GS = ± 12 V, V_DS = 0 V
30
⎯
⎯
V
18
⎯
⎯
V
⎯
⎯
1
μA
⎯
⎯
±1
μA
V_th
⏐Y_fs⏐
R_{DS (ON)}
V_DS = 3 V, I_D = 1 mA
V_DS = 3 V, I_D = 2 A
I_D = 3.0 A, V_GS = 10V
I_D = 2.0 A, V_GS = 4.5 V
I_D = 1.0 A, V_GS = 2.5 V
I_D = 0.5 A, V_GS = 1.8 V
0.4
⎯
1.0
V
(Note3) 3.8
7.7
⎯
S
(Note3)
⎯
42
53
(Note3)
⎯
51
65
mΩ
(Note3)
⎯
64
87
(Note3)
⎯
81
131
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
V_DS = 15 V, I_DS= 3.0 A
V_GS = 4 V
⎯
270
⎯
⎯
56
⎯
pF
⎯
47
⎯
⎯
4.3
⎯
⎯
2.8
⎯
nC
⎯
1.5
⎯
t_on
t_off
V_DSF
V_DD = 10 V, I_D = 2 A,
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
⎯
20
⎯
ns
⎯
31
⎯
I_D = − 4.0 A, V_GS = 0 V
(Note3) ⎯ – 0.9 – 1.2 V
1
2008-10-20