SSM3K315T Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High-Speed Switching Applications

SSM3K315T
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
SSM3K315T
○ High-Speed Switching Applications
• 4.5-V drive
• Low ON-resistance : R_on = 41.5 mΩ (max) (@V_GS = 4.5 V)
: R_on = 27.6 mΩ (max) (@V_GS = 10 V)
+0.2
2.8-0.3
+0.2
1.6-0.1
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Symbol
V_DSS
Rating
Unit
30
V
１
２
３
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
I_D (Note 1)
6.0
A
Pulse
I_DP (Note 1)
12.0
Drain power dissipation
P_D (Note 1)
700
mW
t = 10 s
1250
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55 to 150
°C
1: Gate
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TSM
2: Source
3: Drain
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
JEDEC
―
maximum ratings.
Please design the appropriate reliability upon reviewing the
JEITA
―
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
TOSHIBA
2-3S1A
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Weight: 10 mg (typ.)
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note 3: Pulse test
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_GSS
V_th
⏐Y_fs⏐
R_{DS (ON)}
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_on
t_off
V_DSF
I_D = 10 mA, V_GS = 0 V
I_D = 10 mA, V_GS = -20 V
V_DS = 30 V, V_GS = 0 V
V_GS = ± 20 V, V_DS = 0 V
V_DS = 5 V, I_D = 1 mA
V_DS = 5 V, I_D = 4 A
I_D = 4.0 A, V_GS = 10 V
I_D = 2.0 A, V_GS = 4.5 V
(Note 3)
(Note 3)
(Note 3)
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
V_DS = 15 V, I_D =6.0 A
V_GS = 10 V
V_DD = 15 V, I_D = 2.0 A,
V_GS = 0 to 4.5 V, R_G = 10 Ω
I_D = -6.0 A, V_GS = 0 V
(Note 3)
30
15
⎯
⎯
1.3
11.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Typ. Max Unit
⎯
⎯
V
⎯
⎯
⎯
1
μA
⎯ ±0.1 μA
⎯
2.5
V
23.0 ⎯
S
20.5 27.6
mΩ
27.0 41.5
450 ⎯
120 ⎯
pF
77
⎯
10.1 ⎯
7.6
⎯
nC
2.5
⎯
21
⎯
ns
15
⎯
-0.85 -1.2
V
2008-11-04