SSM3K310T Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

SSM3K7002F
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM3K7002F
High-Speed Switching Applications
Analog Switch Applications
Unit: mm
• Small package
• Low ON-resistance : R_on = 3.3 Ω (max) (@V_GS = 4.5 V)
: R_on = 3.2 Ω (max) (@V_GS = 5 V)
: R_on = 3.0 Ω (max) (@V_GS = 10 V)
Absolute Maximum Ratings (Ta = 25°C)
+0.5
2.5-0.3
+0.25
1.5-0.15
1
2
3
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
V_DS
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
60
V
± 20
V
200
mA
800
200
mW
150
°C
−55 to 150
°C
S-MINI
JEDEC
1.Gate
2.Source
3.Drain
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-59
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on delay time
Turn-off delay time
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
⎪Y_fs⎪
R_{DS (ON)}
C_iss
C_rss
C_oss
td_(on)
td_(off)
V_GS = ± 20 V, V_DS = 0
I_D = 0.1 mA, V_GS = 0
V_DS = 60 V, V_GS = 0
V_DS = 10 V, I_D = 0.25 mA
V_DS = 10 V, I_D = 200 mA
I_D = 500 mA, V_GS = 10 V
I_D = 100 mA, V_GS = 5 V
I_D = 100 mA, V_GS = 4.5 V
V_DS = 25 V, V_GS = 0, f = 1 MHz
V_DD = 30 V , I_D = 200 mA ,
V_GS = 0 to 10 V
Min Typ Max Unit
⎯
⎯ ± 10 μA
60
⎯
⎯
V
⎯
⎯
1
μA
1.0
⎯
2.5
V
170 ⎯
⎯
mS
⎯
2.0
3.0
⎯
2.1 3.2
Ω
⎯
2.2
3.3
⎯
17
⎯
pF
⎯
1.4
⎯
pF
⎯
5.8
⎯
pF
⎯
2.4
4.0
ns
⎯
26
40
1
2007-11-01