SSM3K17FU_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM3K17FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K17FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
• Suitable for high-density mounting due to compact package
• High drain-source voltage
• High speed switching
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
50
V
Gate-Source voltage
V_GSS
±7
V
Drain current
DC
Pulse
I_D
100
mA
I_DP
200
Drain power dissipation (Ta = 25°C)
P_D(Note 1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
SC-70
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2E1E
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 6 mg (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm² × 3)
0.6 mm
1.0 mm
Marking
3
Equivalent Circuit
3
DM
1
2
1
2
This transistor is a electrostatic sensitive device. Please handle with caution.
1
2007-11-01