SSM3K16TE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications Analog Switch Applications

SSM3K16TE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16TE
High Speed Switching Applications
Analog Switch Applications
Unit: mm
· Suitable for high-density mounting due to compact package
· Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V)
: Ron = 15 Ω (max) (@VGS = 1.5 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Symbol
V_DS
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
Rating
Unit
20
V
±10
V
100
mA
200
100
mW
150
°C
-55~150
°C
Marking
Equivalent Circuit
3
3
JEDEC
―
JEITA
―
TOSHIBA
2-1B1B
Weight: 2.2 mg (typ.)
DS
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2002-01-17