SSM3K16FV Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

SSM3K16FV
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FV
High Speed Switching Applications
Analog Switch Applications
• Suitable for high-density mounting due to compact package
• Low on-resistance : R_on = 3.0 Ω (max) (@V_GS = 4 V)
: R_on = 4.0 Ω (max) (@V_GS = 2.5 V)
: R_on = 15 Ω (max) (@V_GS = 1.5 V)
1.2±0.05
0.8±0.05
nit: mm
1
Absolute Maximum Ratings (Ta = 25°C)
3
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
20
V
Gate-Source voltage
V_GSS
±10
V
Drain current
DC
Pulse
I_D
100
mA
I_DP
200
Drain power dissipation (Ta = 25°C)
P_D (Note 1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55~150
°C
2
VESM
1.Gate
2.Source
3.Drain
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
-
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
TOSHIBA
-
2-1L1B
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.0015 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t)
0.5mm
0.45mm
0.45mm
0.4mm
Marking
3
Equivalent Circuit
3
DS
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01