SSM3K16FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications Analog Switching Applications

SSM3K16FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K16FU
High Speed Switching Applications
Analog Switching Applications
Unit: mm
· Suitable for high-density mounting due to compact package
· Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V)
: Ron = 15 Ω (max) (@VGS = 1.5 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
20
V
Gate-Source voltage
V_GSS
±10
V
Drain current
DC
Pulse
I_D
100
mA
I_DP
200
Drain power dissipation (Ta = 25°C)
P_D (Note)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
-55~150
°C
Note: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.6 mm² ´ 3)
JEDEC
JEITA
TOSHIBA
―
SC-70
2-2E1E
0.6 mm
1.0 mm
Marking
3
Equivalent Circuit
3
DS
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2001-12-18