SSM3K15TE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM3K15TE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15TE
High Speed Switching Applications
Analog Switch Applications
• Small package
• Low on resistance
: R_on = 4.0 Ω (max) (@V_GS = 4 V)
: R_on = 7.0 Ω (max) (@V_GS = 2.5 V)
Unit: mm
1.2±0.05
0.8±0.05
１
２
３
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
V_DS
V_GSS
I_D
I_DP
30
V
±20
V
100
mA
200
TESM
1. Gate
2. Source
3. Drain
Drain power dissipation (Ta = 25°C)
P_D
100
mW
Channel temperature
T_ch
150
°C
JEDEC
-
Storage temperature
T_stg
−55~150
°C
JEITA
-
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-1B1B
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.0022 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
3
Equivalent Circuit
3
DP
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01