SSM3K15FST5LFT Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM3K15FS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15FS
High Speed Switching Applications
Analog Switching Applications
Unit: mm
• Compact package suitable for high-density mounting
• Low ON-resistance
: R_on = 4.0 Ω (max) (@V_GS = 4 V)
: R_on = 7.0 Ω (max) (@V_GS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
30
V
Gate-Source voltage
V_GSS
±20
V
DC
Drain current
I_D
100
mA
Pulse
I_DP
200
Drain power dissipation (Ta = 25°C)
P_D
100
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2H1B
Weight: 2.4 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit
3
3
DP
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01