SSM3K15FS Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM3K15FS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15FS
High Speed Switching Applications
Analog Switching Applications
Unit: mm
· Compact package suitable for high-density mounting
· Low ON-resistance
: Ron = 4.0 Ω (max) (@VGS = 4 V)
: Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Symbol
V_DS
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
Rating
Unit
30
V
±20
V
100
mA
200
100
mW
150
°C
-55~150
°C
Marking
3
Equivalent Circuit
3
JEDEC
―
JEITA
―
TOSHIBA
2-2H1B
Weight: 2.4 mg (typ.)
DP
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2001-12-04