SSM3K15AMFV Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Load Switching Applications

SSM3K15AMFV
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
SSM3K15AMFV
Load Switching Applications
• 2.5 V drive
• Low ON-resistance: R_DS(ON) = 3.6 Ω (max) (@V_GS = 4 V)
R_DS(ON) = 6.0 Ω (max) (@V_GS = 2.5 V)
Unit: mm
1.2±0.05
0.8±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
V_DSS
30
V
V_GSS
± 20
V
I_D
100
mA
I_DP
400
P_D(Note 1)
150
mW
T_ch
150
°C
T_stg
−55 to 150
°C
1
3
2
VESM
1.Gate
2.Source
3.Drain
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
TOSHIBA
―
2-1L1B
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 1.5 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad:0.585mm²)
0.5mm
0.45mm
0.45mm
0.4mm
Marking
3
DI
1
2
Equivalent Circuit (top view)
3
1
2
1
2010-11-29