SSM3K15ACT Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Load Switching Applications

SSM3K15ACT
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
SSM3K15ACT
Load Switching Applications
• 2.5 V drive
• Low ON-resistance: R_DS(ON) = 3.6 Ω (max) (@V_GS = 4 V)
R_DS(ON) = 6.0 Ω (max) (@V_GS = 2.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DSS
30
V
Gate-Source voltage
V_GSS
± 20
V
Drain current
DC
I_D
Pulse
I_DP
100
mA
400
Power dissipation
P_D(Note 1)
100
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of
CST3
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
TOSHIBA
―
2-1J1B
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.75 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm²)
Marking (Top View)
Polarity mark
DI
Pin Condition (Top View)
Polarity mark (on the top)
1
3
2
1. Gate
2. Source
3. Drain
*Electrodes: On the bottom
Equivalent Circuit
3
1
2
1
2010-11-29