SSM3K131TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOIV)

SSM3K131TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
SSM3K131TU
○ High-Speed Switching Applications
• 4.5-V drive
• Low ON-resistance : R_on = 41.5 mΩ (max) (@V_GS = 4.5 V)
: R_on = 27.6 mΩ (max) (@V_GS = 10 V)
2.1±0.1
1.7±0.1
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
V_DSS
30
V
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
I_D (Note 1)
6.0
A
Pulse
I_DP (Note 1)
12.0
P_D (Note 2)
800
Drain power dissipation
P_D (Note 3)
500
mW
t = 10 s
1000
1
2
3
Channel temperature
T_ch
150
°C
1: Gate
Storage temperature range
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
UFM
2: Source
3: Drain
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
JEDEC
JEITA
TOSHIBA
―
―
2-2U1A
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Weight: 6.6mg (typ.)
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm²)
Note 3: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note 4: Pulse test
Symbol
Test Conditions
Min Typ. Max Unit
V _{(BR) DSS} I_D = 10 mA, V_GS = 0 V
V _{(BR) DSX} I_D = 10 mA, V_GS = -20 V
30
⎯
⎯
V
15
⎯
⎯
I_DSS
V_DS = 30 V, V_GS = 0 V
⎯
⎯
1
μA
I_GSS
V_GS = ± 20 V, V_DS = 0 V
⎯
⎯ ±0.1 μA
V_th
V_DS = 5 V, I_D = 1 mA
1.3
⎯
2.5
V
⏐Y_fs⏐
V_DS = 5 V, I_D = 4 A
(Note 4) 11.5 23.0 ⎯
S
R_{DS (ON)}
I_D = 4.0 A, V_GS = 10 V
I_D = 2.0 A, V_GS = 4.5 V
(Note 4) ⎯
(Note 4) ⎯
20.5 27.6
mΩ
27.0 41.5
C_iss
⎯
450
⎯
C_oss
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
⎯
120
⎯
pF
C_rss
⎯
77
⎯
Q_g
V_DS = 15 V, I_D = 6.0 A
Q_gs
V_GS = 10 V
Q_gd
⎯ 10.1 ⎯
⎯
7.6
⎯
nC
⎯
2.5
⎯
t_on
V_DD = 15 V, I_D = 2.0 A,
t_off
V_GS = 0 to 4.5 V, R_G = 10 Ω
⎯
21
⎯
ns
⎯
15
⎯
V_DSF
I_D = -6.0 A, V_GS = 0 V
(Note 4) ⎯ -0.85 -1.2
V
Start of commercial production
2008-09
1
2014-03-01