SSM3K122TU_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

SSM3K122TU
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K122TU
Power Management Switch Applications
High-Speed Switching Applications
• 1.5 V drive
• Low ON-resistance:
R_on = 304 mΩ (max) (@V_GS = 1.5 V)
R_on = 211 mΩ (max) (@V_GS = 1.8 V)
R_on = 161 mΩ (max) (@V_GS = 2.5 V)
R_on = 123 mΩ (max) (@V_GS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V_DSS
V_GSS
I_D
I_DP
P_{D (Note 1)}
P_{D (Note 2)}
T_ch
T_stg
Rating
20
± 10
2.0
4.0
800
500
150
−55 to 150
Unit
V
V
A
mW
°C
°C
Note:
Note 1:
Note 2:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/
“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm² )
Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
2.1±0.1
1.7±0.1
Unit: mm
1
2
3
UFM
1: Gate
2: Source
3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristics
Drain-Source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note 3: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS} I_D = 1 mA, V_GS = 0 V
V _{(BR) DSX} I_D = 1 mA, V_GS = − 10 V
20
⎯
⎯
V
12
⎯
⎯
I_DSS
V_DS = 20 V, V_GS = 0 V
⎯
⎯
1
μA
I_GSS
V_GS = ± 10 V, V_DS = 0 V
⎯
⎯
±1
μA
V_th
V_DS = 3 V, I_D = 1 mA
0.35 ⎯
1.0
V
⏐Y_fs⏐
V_DS = 3 V, I_D = 1.0 A
(Note 3) 2.6
5.2
⎯
S
I_D = 1.0 A, V_GS = 4.0 V
(Note 3)
⎯
87
123
R_{DS (ON)}
I_D = 1.0 A, V_GS = 2.5 V
I_D = 0.5 A, V_GS = 1.8 V
(Note 3)
⎯
112
161
mΩ
(Note 3)
⎯
147 211
I_D = 0.3 A, V_GS = 1.5 V
(Note 3)
⎯
182 304
C_iss
⎯
195
⎯
C_oss
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
⎯
35
⎯
pF
C_rss
⎯
29
⎯
Q_g
⎯
3.4
⎯
Q_gs
V_DS = 10 V, I_D= 2.0 A, V_GS = 4 V
⎯
2.3
⎯
nC
Q_gd
⎯
1.1
⎯
t_on
V_DD = 10 V, I_D = 0.5 A,
t_off
V_GS = 0 to 2.5 V, R_G = 4.7 Ω
⎯
8.0
⎯
ns
⎯
9.0
⎯
V_DSF
I_D = −2.0 A, V_GS = 0 V
(Note 3) ⎯ −0.85 -1.2
V
Start of commercial production
2007-10
1
2014-03-01