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SSM3K121TU_14 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type | |||
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SSM3K121TU
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K121TU
Power Management Switch Applications
High-Speed Switching Applications
⢠1.5 V drive
⢠Low ON-resistance:
Ron = 140 m⦠(max) (@VGS = 1.5 V)
Ron = 93 m⦠(max) (@VGS = 1.8 V)
Ron = 63 m⦠(max) (@VGS = 2.5 V)
Ron = 48 m⦠(max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
VDS
20
V
VGSS
± 10
V
ID
3.2
A
IDP
6.4
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
â55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on a ceramic board.
(25.4 mm à 25.4 mm à 0.8 t, Cu Pad: 645 mm2 )
Note 2: Mounted on a FR4 board.
(25.4 mm à 25.4 mm à 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
Unit: mm
2.1±0.1
1.7±0.1
1
2
3
UFM
1: Gate
2: Source
3: Drain
JEDEC
â
JEITA
â
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristics
Drain-Source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
GateâSource Charge
GateâDrain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note 3: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V (BR) DSS ID = 1 mA, VGS = 0
V (BR) DSX ID = 1 mA, VGS = â 10 V
20
â¯
â¯
V
12
â¯
â¯
IDSS
VDS = 20 V, VGS = 0
â¯
â¯
1
μA
IGSS
VGS = ± 10 V, VDS = 0
â¯
â¯
±1
μA
Vth
VDS = 3 V, ID = 1 mA
0.35 â¯
1.0
V
âYfsâ
VDS = 3 V, ID = 2.0 A
(Note 3) 6.5
13
â¯
S
ID = 2.0 A, VGS = 4.0 V
(Note 3)
â¯
36
48
RDS (ON)
ID = 2.0 A, VGS = 2.5 V
ID = 1.0 A, VGS = 1.8 V
(Note 3)
â¯
46
63
mΩ
(Note 3)
â¯
60
93
ID = 0.5 A, VGS = 1.5 V
(Note 3)
â¯
75
140
Ciss
â¯
400
â¯
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
â¯
68
â¯
pF
Crss
â¯
60
â¯
Qg
â¯
5.9
â¯
Qgs
VDS = 10 V, IDS= 3.2 A, VGS = 4 V
â¯
4.1
â¯
nC
Qgd
â¯
1.8
â¯
ton
VDD = 10 V, ID = 2 A,
toff
VGS = 0 to 2.5 V, RG = 4.7 Ω
â¯
14
â¯
ns
â¯
15
â¯
VDSF
ID = â3.2 A, VGS = 0 V
(Note 3) ⯠â0.85 -1.2
V
Start of commercial production
2006-11
1
2014-03-01
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