SSM3K121TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N-Channel MOS Type Power Management Switch Applications

SSM3K121TU
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K121TU
Power Management Switch Applications
High-Speed Switching Applications
• 1.5 V drive
• Low ON-resistance:
R_on = 140 mΩ (max) (@V_GS = 1.5 V)
R_on = 93 mΩ (max) (@V_GS = 1.8 V)
R_on = 63 mΩ (max) (@V_GS = 2.5 V)
R_on = 48 mΩ (max) (@V_GS = 4.0 V)
Unit: mm
2.1±0.1
1.7±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V_DS
V_GSS
I_D
I_DP
P_{D (Note 1)}
P_{D (Note 2)}
T_ch
T_stg
Rating
20
± 10
3.2
6.4
800
500
150
−55~150
Unit
V
V
A
mW
°C
°C
Note:
Note 1:
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm² )
Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
1
2
3
UFM
1: Gate
2: Source
3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristics
Drain-Source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note 3: Pulse test
Symbol
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_GSS
V_th
⏐Y_fs⏐
R_{DS (ON)}
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_on
t_off
V_DSF
Test Condition
I_D = 1 mA, V_GS = 0
I_D = 1 mA, V_GS = − 10 V
V_DS = 20 V, V_GS = 0
V_GS = ± 10 V, V_DS = 0
V_DS = 3 V, I_D = 1 mA
V_DS = 3 V, I_D = 2.0 A
I_D = 2.0 A, V_GS = 4.0 V
I_D = 2.0 A, V_GS = 2.5 V
I_D = 1.0 A, V_GS = 1.8 V
I_D = 0.5 A, V_GS = 1.5 V
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DS = 10 V, I_DS= 3.2 A
V_GS = 4 V
V_DD = 10 V, I_D = 2 A,
V_GS = 0~2.5 V, R_G = 4.7 Ω
I_D = −3.2 A, V_GS = 0 V
(Note 3)
Min
20
12
⎯
⎯
0.35
6.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
13
36
46
60
75
400
68
60
5.9
4.1
1.8
14
15
−0.85
Max
⎯
⎯
1
±1
1.0
⎯
48
63
93
140
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1.2
Unit
V
μA
μA
V
S
mΩ
pF
nC
ns
V
1
2007-11-01