SSM3K107TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High-Speed Switching Applications

SSM3K107TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K107TU
High-Speed Switching Applications
• 4 V drive
• Low ON-resistance:
R_on = 410 mΩ (max) (@V_GS = 4V)
R_on = 200 mΩ (max) (@V_GS = 10V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
20
V
V_GSS
± 20
V
I_D
1.5
A
I_DP
3.0
P_{D (Note 1)}
800
mW
P_{D (Note 2)}
500
T_ch
150
°C
T_stg
−55~150
°C
Note:
Note 1:
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm² )
Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
Unit: mm
2.1±0.1
1.7±0.1
1
2
3
1: Gate
2: Source
3: Drain
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
20
⎯
⎯
V
I_DSS
V_DS = 20 V, V_GS = 0
⎯
⎯
1
μA
I_GSS
V_GS = ± 20 V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = 5 V, I_D = 0.1 mA
1.1
⎯
2.3
V
⏐Y_fs⏐
V_DS = 5 V, I_D = 0.6 A
(Note3) 0.68 1.36 ⎯
S
R_{DS (ON)}
I_D = 0.6 A, V_GS = 10 V
I_D = 0.6 A, V_GS = 4 V
(Note3)
⎯
135 200
mΩ
(Note3)
⎯
250 410
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
60
⎯
pF
C_oss
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
47
⎯
pF
⎯
17
⎯
pF
t_on
V_DD = 10 V, I_D = 0.6 A,
t_off
V_GS = 0 to 4 V, R_G = 10 Ω
⎯
19
⎯
ns
⎯
10
⎯
V_DSF
I_D = − 1.5 A, V_GS = 0 V
(Note3) ⎯
– 0.9 – 1.2
V
Note3: Pulse test
1
2007-11-01