SSM3K106TU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High-Speed Switching Applications

SSM3K106TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K106TU
High-Speed Switching Applications
• 4 V drive
• Low ON-resistance:
R_on = 530 mΩ (max) (@V_GS = 4 V)
R_on = 310 mΩ (max) (@V_GS = 10 V)
Unit: mm
2.1±0.1
1.7±0.1
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
20
V
V_GSS
± 20
V
I_D
1.2
A
I_DP
2.4
P_{D (Note 1)}
800
mW
P_{D (Note 2)}
500
T_ch
150
°C
T_stg
−55 to 150
°C
Note:
Note 1:
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm² )
Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
1
2
3
1: Gate
2: Source
3: Drain
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 3: Pulse test
Symbol
Test Conditions
Min Typ. Max Unit
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
20
⎯
⎯
V
I_DSS
V_DS = 20 V, V_GS = 0
⎯
⎯
1
μA
I_GSS
V_GS = ±20 V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = 5 V, I_D = 0.1 mA
1.1
⎯
2.3
V
⏐Y_fs⏐
V_DS = 5 V, I_D = 0.6 A
(Note 3) 0.58 1.16 ⎯
S
R_{DS (ON)}
I_D = 0.6 A, V_GS = 10 V
I_D = 0.6 A, V_GS = 4 V
(Note 3)
⎯
230 310
mΩ
(Note 3)
⎯
390 530
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
36
⎯
pF
C_oss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
30
⎯
pF
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
10
⎯
pF
t_on
V_DD = 10 V, I_D = 0.6 A,
t_off
V_GS = 0 to 4 V, R_G = 10 Ω
⎯
21
⎯
ns
⎯
8
⎯
V_DSF
I_D = −1.2 A, V_GS = 0 V
(Note 3) ⎯
−1.0 −1.4
V
Start of commercial production
2005-02
1
2014-03-01