SSM3K105TU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

SSM3K105TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K105TU
High Speed Switching Applications
• 4V drive
• Low on-resistance:
R_on = 480mΩ (max) (@V_GS = 3.3V)
R_on = 200mΩ (max) (@V_GS = 4V)
R_on = 110mΩ (max) (@V_GS = 10V)
Unit: mm
2.1±0.1
1.7±0.1
Absolute Maximum Ratings (Ta = 25°C)
1
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
30
V
V_GSS
± 20
V
I_D
2.1
A
I_DP
4.2
P_{D (Note 1)}
800
mW
P_{D (Note 2)}
500
T_ch
150
°C
T_stg
−55~150
°C
Note:
Note 1:
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Mounted on ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm² )
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
2
3
1: Gate
2: Source
3: Drain
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Symbol
Test Conditions
Min Typ. Max Unit
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
30
⎯
⎯
V
I_DSS
V_DS = 30 V, V_GS = 0
⎯
⎯
1
μA
I_GSS
V_GS = ±16V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = 5 V, I_D = 0.1 mA
1.1
⎯
1.8
V
⏐Y_fs⏐
V_DS = 5 V, I_D = 0.75 A
(Note3) 1.0
2.0
⎯
S
R_{DS (ON)}
I_D = 0.75 A, V_GS = 10 V
I_D = 0.75 A, V_GS = 4 V
I_D = 0.75 A, V_GS = 3.3 V
(Note3)
⎯
85
110
(Note3)
⎯
150 200 ^mΩ
(Note3)
⎯
210 480
C_iss
V_DS = 15 V, V_GS = 0, f = 1 MHz
⎯
102
⎯
pF
C_oss
V_DS = 15 V, V_GS = 0, f = 1 MHz
⎯
57
⎯
pF
C_rss
V_DS = 15 V, V_GS = 0, f = 1 MHz
⎯
22
⎯
pF
t_on
t_off
V_DSF
V_DD = 15 V, I_D = 0.75 A,
V_GS = 0~4 V, R_G = 10 Ω
I_D = −2.1A, V_GS = 0 V
(Note3)
⎯
46
⎯
ns
⎯
65
⎯
⎯ −0.95 −1.3
V
Note3: Pulse test
1
2007-11-01